PART |
Description |
Maker |
BB302MBW-TL-E BB302M |
Built in Biasing Circuit MOS FET IC VHF RF Amplifier
|
Renesas Electronics Corporation
|
BB502M BB502MBS-TL-E |
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Renesas Electronics Corporation
|
BB502CBS-TL-H BB502C11 |
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Renesas Electronics Corporation
|
BB501CAS-TL-E |
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Renesas Electronics Corporation
|
TBB1005EMTL-H TBB100511 |
Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
|
Renesas Electronics Corporation
|
TBB1005 TBB1005EMTL-E |
Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
|
Renesas Electronics Corporation
|
TBB101006 TBB1010KMTL-E |
Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier
|
Renesas Electronics Corporation
|
BB402M |
Build in Biasing Circuit MOS FET IC VHF RF Amplifier
|
Hitachi Semiconductor
|
BB101M |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Hitachi Semiconductor Hitachi,Ltd.
|
BB101C |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
|
BB501M BB501 |
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
|
HITACHI[Hitachi Semiconductor]
|